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題名:金屬鋁與礦化劑進行氨熱法合成氮化鋁晶體之研究    
Investigation on AIN Crystal Synthesis with Aluminum Metal and Mineralizer by Ammonothermal Method
著者:吳玉祥(Yu-Shiang Wu) ;黃俊強(Chun-Chiang Huang)
出版地區:台灣
出版城市:台北市
學科:人文綜合 ; 社科綜合 ; 自科綜合 ; 應科綜合
關鍵字:氨熱法 ; 氮化鋁晶體 ; 礦化劑 ; 超臨界流體 ; Ammonothermal method ; AIN crystal ; Mineralizer ; Supercritical fluid
刊名:中華技術學院學報
卷期:39期(2008.12)
頁碼:1-15
語言:繁體中文
摘要:
本研究係以氨熱法(Ammonothermal method)生長三五族氮化物之氮化鋁(AIN)晶體,於高溫高壓超臨界流體的密閉環境下生長AIN晶體粉末。研究主要以鋁粉與酸性礦化劑(NH4Br、NH4I) 1:1的莫耳比率,在不同溫度下(400、500℃)進行AIN長晶實驗,以掃瞄式電子顯微鏡(SEM)、穿透式電子顯微鏡(TEM)、X-ray繞射(XRD)進行粉末特性分析,並由Rietveld Method計算樣品實際晶格常數。SEM分析結果AIN晶體呈現出不規則且破碎形狀;TEM分析得知NH4Br在500℃的AIN晶粒大小約為125 nm,NH4I礦化劑在500℃所合成的AIN晶體,晶粒大小約在100 nm,兩者礦化劑系統下經由選區電子繞射圖(Selected area electron diffraction; SAED)計算證實,晶體為六方晶系AIN。XRD顯示NH4I礦化劑在低溫400℃以上就可合成AIN成分;NH4Br礦化劑在溫度400℃沒有起反應,還無法形成AIN相,但於500℃時就有AIN相的存在;由Rietveld Method精算結果,NH4I合成的AIN晶體與標準之六方晶系AIN晶體(JCPD 76-0702)比較得知,a軸長顯示很小幅度的變動,c軸長變動較大,可能是所合成AIN內含有金屬鋁存在,或是晶體在合成過程中,受到外來雜質的作用而造成。
AIN crystals were prepared utilizing an ammonothermal method under conditions of high temperature and pressure. The effects of temperature and mineralizers on AIN crystal synthesis and structure were investigated. Al powder and mineralizer reactants were placed in an autoclave and reacted with liquid ammonia under conditions of high temperature and pressure, producing a supercritical fluid which resulted in the formation of AIN crystals. AIN crystals were synthesized with a 1:1 mole ratio of aluminum metal to mineralizer and crystal growth temperature was varied from 300-500°C. The structural and physical properties of AIN crystals were examined via scanning electronic microscope (SEM), transmission electronic microscope (TEM), and powder X-ray diffraction (XRD). The SEM micrographs indicate irregular crystal shape. The particles synthesized at 500℃ with NH4I and NH4Br mineralizers were roughly oblong in shape and had diameters of approximately 100 nm and 125 nm, respectively. Furthermore, as verified by SAED, the AIN crystals had hexagonal structures for all parameters tested. XRD patterns revealed that AIN crystals could not be formed at 300 and 400℃ when NH4Cl and NH4Br mineralizers were utilized. However, at 500℃, AIN crystals were synthesized utilizing NH4Br as the mineralizer. Unlike NN4Br and NH4Cl, when NH4I was utilized as the mineralizer, AIN crystals were synthesized at temperatures as low as 300℃. As determined by the Rietveld method, the AIN synthesized from NH4I exhibits other impurities in comparison with the standard hexagonal AIN. As temperature increased, the growth rate of AIN crystals increased for the NH4Br and NH4I mineralizers. Thus, one can determine that the amount and variety of mineralizers will directly affect the synthesis and the properties of AIN crystals.




本卷期目次
中華技術學院學報 39期 (2008.12)
金屬鋁與礦化劑進行氨熱法合成氮化鋁晶體之研究/ 吳玉祥黃俊強
算數運算處理器之晶片設計/ 廖鴻儒陳建中許能傑
持槍姿勢與握持方式對手槍射擊績效之影響/ 郭承亮林致祥賴韋佑
Measuring the New Product Development Performance of Small and Medium Enterprises in Taiwan/ Yueh-Yun Chu
股權溢價之謎文獻探討與評析/ 許惠珠胡惟喻
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Hot Rolling Effect on Microstructures and Mechanical Properties of Tempered Duplex Stainless Steel/ D.C. Wen
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以高中職社區化之基礎轉銜十二年國民基本教育調查研究-以高雄市為例/ 湯誌龍
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無人飛機縱向模糊控制PID自動駕駛之設計與模擬/ 王俊筆歐陽讓
The Situational Awareness of In-flight Icing for Unmanned Aerial Vehicles/ Ray C. ChangCun-En YeLih-Shyng Shyu
新型特殊形狀藍芽/超寬頻雙功能天線之設計/ 袁敏事林昆志
MFSK Modulation Recognition Using the Maximum-Likelihood Method with Noncoherent Detection/ Tso-Cho ChenShin-Wei Chiu
 
   
 
   

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